1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.7704 | $0.755 | $0.7319 | $0.7088 | $0.678 | Get Quotation! |
RdsOn(Max)@Id | 2V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±12V |
Vgs | 5.2 nC @ 4.5 V |
FETFeature | 800mW (Ta) |
DraintoSourceVoltage(Vdss) | 20 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 2.5V, 4.5V |
ProductStatus | Not For New Designs |
Package/Case | TUMT3 |
GateCharge(Qg)(Max)@Vgs | 3-SMD, Flat Leads |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | Surface Mount |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 1.5A (Ta) |
Vgs(Max) | 560 pF @ 10 V |
MinRdsOn) | 135mOhm @ 1.5A, 4.5V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | 150°C (TJ) |
ROHM
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TUMT3, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!