| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $18.128 | $17.7654 | $17.2216 | $16.6778 | $15.9526 | Get Quotation! |
| RdsOn(Max)@Id | 5V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | +22V, -10V |
| Vgs | 73 nC @ 20 V |
| FETFeature | 240W (Tc) |
| DraintoSourceVoltage(Vdss) | 650 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 18V, 20V |
| ProductStatus | Active |
| Package/Case | Automotive |
| GateCharge(Qg)(Max)@Vgs | AEC-Q101 |
| Grade | |
| MountingType | HiP247™ |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-247-3 |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Current-ContinuousDrain(Id)@25°C | 45A (Tc) |
| Vgs(Max) | 1370 pF @ 400 V |
| MinRdsOn) | 67mOhm @ 20A, 20V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 200°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!