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SCTWA10N120
the part number is SCTWA10N120
Part
SCTWA10N120
Manufacturer
Description
IC POWER MOSFET 1200V HIP247
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $9.2736 $9.0881 $8.8099 $8.5317 $8.1608 Get Quotation!
Specification
RdsOn(Max)@Id 690mOhm @ 6A, 20V
Vgs(th)(Max)@Id 21 nC @ 20 V
Vgs 3.5V @ 250µA (Typ)
FETFeature 110W (Tc)
DraintoSourceVoltage(Vdss) N-Channel
OperatingTemperature -
DriveVoltage(MaxRdsOn 12A (Tc)
ProductStatus Obsolete
Package/Case HiP247™ Long Leads
GateCharge(Qg)(Max)@Vgs TO-247-3
Grade
MountingType -
InputCapacitance(Ciss)(Max)@Vds 300 pF @ 1000 V
Series -
Qualification
SupplierDevicePackage Through Hole
FETType SiCFET (Silicon Carbide)
Technology -
Current-ContinuousDrain(Id)@25°C 1200 V
Vgs(Max) +25V, -10V
MinRdsOn) 20V
Package Tube
PowerDissipation(Max) -55°C ~ 200°C (TJ)
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