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SCTW90N65G2V
the part number is SCTW90N65G2V
Part
SCTW90N65G2V
Manufacturer
Description
SICFET N-CH 650V 90A HIP247
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
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Uni Price $31.77 $31.1346 $30.1815 $29.2284 $27.9576 Get Quotation!
Specification
RdsOn(Max)@Id 5V @ 250µA
Vgs(th)(Max)@Id +22V, -10V
Vgs 157 nC @ 18 V
FETFeature 390W (Tc)
DraintoSourceVoltage(Vdss) 650 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 18V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType HiP247™
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-247-3
FETType N-Channel
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C 90A (Tc)
Vgs(Max) 3300 pF @ 400 V
MinRdsOn) 25mOhm @ 50A, 18V
Package Tube
PowerDissipation(Max) -55°C ~ 200°C (TJ)
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