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SCTWA50N120
the part number is SCTWA50N120
Part
SCTWA50N120
Manufacturer
Description
SICFET N-CH 1200V 65A HIP247
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $32.89 $32.2322 $31.2455 $30.2588 $28.9432 Get Quotation!
Specification
RdsOn(Max)@Id 3V @ 1mA
Vgs(th)(Max)@Id +25V, -10V
Vgs 122 nC @ 20 V
FETFeature 318W (Tc)
DraintoSourceVoltage(Vdss) 1200 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 20V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType HiP247™
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-247-3
FETType N-Channel
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C 65A (Tc)
Vgs(Max) 1900 pF @ 400 V
MinRdsOn) 69mOhm @ 40A, 20V
Package Tube
PowerDissipation(Max) -55°C ~ 200°C (TJ)
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