| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $1.64 | $1.6072 | $1.558 | $1.5088 | $1.4432 | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Dual Supply Voltage | 650 V |
| Fall Time | 7 ns |
| RoHS | Compliant |
| Drain to Source Voltage (Vdss) | 600 V |
| Drain to Source Resistance | 440 mΩ |
| Element Configuration | Single |
| Lifecycle Status | Obsolete (Last Updated: 2 years ago) |
| Number of Pins | 3 |
| Input Capacitance | 1.2 nF |
| Lead Free | Lead Free |
| Rds On Max | 440 mΩ |
| Max Power Dissipation | 125 W |
| Drain to Source Breakdown Voltage | 650 V |
| On-State Resistance | 440 mΩ |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| REACH SVHC | No SVHC |
| Current Rating | 11 A |
| Termination | Through Hole |
| Turn-On Delay Time | 34 ns |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 125 W |
| Continuous Drain Current (ID) | 11 A |
| Rise Time | 18 ns |
| Turn-Off Delay Time | 43 ns |
| Package Quantity | 240 |
| Voltage Rating (DC) | 650 V |
| Case/Package | TO-247-3 |
INFINEON
Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
INFINEON
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!