| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $1.69 | $1.6562 | $1.6055 | $1.5548 | $1.4872 | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Fall Time | 20 ns |
| RoHS | Compliant |
| Drain to Source Voltage (Vdss) | 600 V |
| Drain to Source Resistance | 380 mΩ |
| Element Configuration | Single |
| Number of Pins | 3 |
| Height | 20.95 mm |
| Input Capacitance | 1.46 nF |
| Width | 5.3 mm |
| Lead Free | Lead Free |
| Rds On Max | 380 mΩ |
| Max Power Dissipation | 125 W |
| Drain to Source Breakdown Voltage | 600 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Current Rating | 11 A |
| Turn-On Delay Time | 130 ns |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 125 W |
| Continuous Drain Current (ID) | 11 A |
| Rise Time | 35 ns |
| Length | 15.9 mm |
| Turn-Off Delay Time | 150 ns |
| Voltage Rating (DC) | 600 V |
| Case/Package | TO-247-3 |
INFINEON
Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
INFINEON
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!