1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 5V @ 500µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 64 nC @ 10 V |
FETFeature | 125W (Tc) |
DraintoSourceVoltage(Vdss) | 650 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | PG-TO247-3-1 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | CoolMOS™ |
Qualification | |
SupplierDevicePackage | TO-247-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 11A (Tc) |
Vgs(Max) | 1200 pF @ 25 V |
MinRdsOn) | 440mOhm @ 7A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
INFINEON
Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
INFINEON
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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