| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 110W (Tc) |
|---|---|
| Vgs(th)(Max)@Id | Surface Mount |
| Vgs | -55°C ~ 175°C (TJ) |
| FETFeature | 100 V |
| DraintoSourceVoltage(Vdss) | 80A (Tc) |
| OperatingTemperature | 45 nC @ 10 V |
| DriveVoltage(MaxRdsOn | 4.5V @ 250µA |
| ProductStatus | Obsolete |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Series | DeepGATE™, STripFET™ VII |
| Qualification | |
| SupplierDevicePackage | 3100 pF @ 50 V |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 9.5mOhm @ 40A, 10V |
| Vgs(Max) | H2PAK-2 |
| MinRdsOn) | - |
| Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
| PowerDissipation(Max) | 10V |
STMicroelectronics
5A, 900V, 1.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!