| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Max Operating Temperature | 150 °C |
|---|---|
| Power Dissipation | 80 W |
| Min Operating Temperature | -65 °C |
| Drain to Source Resistance | 1.1 Ω |
| Continuous Drain Current (ID) | 5 A |
| Drain to Source Breakdown Voltage | 900 V |
| Element Configuration | Single |
| Rise Time | 12 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Fall Time | 15 ns |
| RoHS | Compliant |
STMicroelectronics
5A, 900V, 1.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!