| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $1.1088 | $1.0866 | $1.0534 | $1.0201 | $0.9757 | Get Quotation! |
| RdsOn(Max)@Id | - |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 28.3 nC @ 4.5 V |
| FETFeature | 110W (Tc) |
| DraintoSourceVoltage(Vdss) | 100 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 4.5V, 10V |
| ProductStatus | Active |
| Package/Case | Automotive |
| GateCharge(Qg)(Max)@Vgs | AEC-Q101 |
| Grade | |
| MountingType | H2PAK-2 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | STripFET™ |
| Qualification | |
| SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| Vgs(Max) | 2900 pF @ 25 V |
| MinRdsOn) | 10mOhm @ 40A, 10V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
STMicroelectronics
5A, 900V, 1.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!