| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.3132 | $0.3069 | $0.2975 | $0.2881 | $0.2756 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 60V |
|---|---|
| Power Dissipation (Max): | 200mW (Ta) |
| Package / Case: | SC-70, SOT-323 |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | UMT3 |
| Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 60V 250mA (Ta) 200mW (Ta) Surface Mount UMT3 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | - |
| Current - Continuous Drain (Id) @ 25°C: | 250mA (Ta) |
| Other Names: | RSU002N06T106-ND RSU002N06T106TR |
| Input Capacitance (Ciss) (Max) @ Vds: | 15pF @ 25V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 2.4 Ohm @ 250mA, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Operating Temperature: | 150°C (TJ) |
ROHM
Small Signal Field-Effect Transistor, 0.25A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!