1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Gate to Source Voltage (Vgs) | 20 V |
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Mount | Surface Mount |
Turn-On Delay Time | 8 ns |
RoHS | Non-Compliant |
Drain to Source Resistance | 1.4 Ω |
Continuous Drain Current (ID) | 250 mA |
Element Configuration | Single |
Length | 2 mm |
Turn-Off Delay Time | 30 ns |
Number of Pins | 3 |
Height | 800 µm |
Input Capacitance | 30 pF |
Width | 1.25 mm |
Case/Package | SC |
Max Power Dissipation | 200 mW |
ROHM
Small Signal Field-Effect Transistor, 0.25A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!