1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Min Operating Temperature | -55 °C |
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Mount | Through Hole |
Fall Time | 6.4 ns |
RoHS | Compliant |
Drain to Source Voltage (Vdss) | 600 V |
Drain to Source Resistance | 190 mΩ |
Lifecycle Status | Obsolete (Last Updated: 2 years ago) |
Number of Pins | 3 |
Input Capacitance | 2.4 nF |
Lead Free | Lead Free |
Rds On Max | 190 mΩ |
Max Power Dissipation | 208 W |
Drain to Source Breakdown Voltage | 650 V |
On-State Resistance | 190 mΩ |
Gate to Source Voltage (Vgs) | 20 V |
Current Rating | 20.7 A |
Turn-On Delay Time | 12 ns |
Max Dual Supply Voltage | 600 V |
Max Operating Temperature | 150 °C |
Power Dissipation | 208 W |
Continuous Drain Current (ID) | 20.7 A |
Rise Time | 15 ns |
Turn-Off Delay Time | 59 ns |
Halogen Free | Halogen Free |
Package Quantity | 500 |
Voltage Rating (DC) | 650 V |
Case/Package | TO-262-3 |
INFINEON
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN
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