| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $2.4341 | $2.3854 | $2.3124 | $2.2394 | $2.142 | Get Quotation! |
| RdsOn(Max)@Id | - |
|---|---|
| Vgs(th)(Max)@Id | - |
| Vgs | - |
| FETFeature | - |
| DraintoSourceVoltage(Vdss) | - |
| OperatingTemperature | - |
| DriveVoltage(MaxRdsOn | - |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | - |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | - |
| FETType | - |
| Technology | - |
| Current-ContinuousDrain(Id)@25°C | - |
| Vgs(Max) | - |
| MinRdsOn) | - |
| Package | Bulk |
| PowerDissipation(Max) | - |
INFINEON
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!