SPI20N60CFD

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SPI20N60CFD

Inventory 8,835

Part

SPI20N60CFD

Manufacturer

Description

Power Field-Effect Transistor, 20.7A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN

Lead Free/ROHS

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	1+	10+	100+	1000+	10000+	Custom
Uni Price	$1.79	$1.7542	$1.7005	$1.6468	$1.5752	Get Quotation!

The above prices does not include taxes and freight rates.

Specification

Min Operating Temperature	-55 °C
Drain to Source Breakdown Voltage	600 V
Nominal Vgs	4 V
Gate to Source Voltage (Vgs)	20 V
REACH SVHC	No SVHC
Dual Supply Voltage	650 V
Termination	Through Hole
Fall Time	6.4 ns
RoHS	Compliant
Max Operating Temperature	150 °C
Drain to Source Voltage (Vdss)	650 V
Power Dissipation	208 W
Drain to Source Resistance	220 mΩ
Continuous Drain Current (ID)	20.7 A
Element Configuration	Single
Rise Time	15 ns
Turn-Off Delay Time	59 ns
Number of Pins	3
Input Capacitance	2.4 nF
Rds On Max	220 mΩ
Case/Package	TO-262-3
Max Power Dissipation	208 W

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INFINEON

Power Field-Effect Transistor, 20.7A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN

View Get Quotation