| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 3.9V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 114 nC @ 10 V |
| FETFeature | 208W (Tc) |
| DraintoSourceVoltage(Vdss) | 600 V |
| OperatingTemperature | - |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Obsolete |
| Package/Case | PG-TO262-3-1 |
| GateCharge(Qg)(Max)@Vgs | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Grade | |
| MountingType | - |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | CoolMOS™ |
| Qualification | |
| SupplierDevicePackage | Through Hole |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 20.7A (Tc) |
| Vgs(Max) | 2400 pF @ 25 V |
| MinRdsOn) | 190mOhm @ 13.1A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
INFINEON
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!