SPI21N10

Part

SPI21N10

Manufacturer

Infineon Technologies

Description

MOSFET N-CH 100V 21A TO262-3

Lead Free/ROHS

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Specification

RdsOn(Max)@Id	4V @ 44µA
Vgs(th)(Max)@Id	±20V
Vgs	38.4 nC @ 10 V
FETFeature	90W (Tc)
DraintoSourceVoltage(Vdss)	100 V
OperatingTemperature	Through Hole
DriveVoltage(MaxRdsOn	10V
ProductStatus	Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType	PG-TO262-3-1
InputCapacitance(Ciss)(Max)@Vds	-
Series	SIPMOS®
Qualification
SupplierDevicePackage	TO-262-3 Long Leads, I2PAK, TO-262AA
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C	21A (Tc)
Vgs(Max)	865 pF @ 25 V
MinRdsOn)	80mOhm @ 15A, 10V
Package	Tube
PowerDissipation(Max)	-55°C ~ 175°C (TJ)

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